An On-Chip Microwave Oscillator Using Gallium Nitride-Based Resonant Tunneling Diode

This paper presents an on-chip GaN-based RTD oscillator (RTO) radiation source. The RTO source includes a GaN-based RTD, a patch antenna and a hemispherical silicon (Si) lens. A metal via was grown on the top of the RTD mesa to connect with the patch antenna as a radio-frequency ($R F$) excitation, and a connection with direct current (DC) feed line for DC power supply. Simulated results show that, the proposed RTO can induce oscillation signal of 19.04 GHz at room temperature, with an output power of 3 mW and air side radiation, offering a compact, highly integrated and stable solution for real-world wireless communication and sensing.