Comparative Analysis of MMIC Conventional SPDT Switch and Quarter Wave Traveling Wave Switch Using GaAs Technology for X Band

In this contribution, a comparative analysis between the traditional SPDT switch and the traveling wave concept is propounded. These designs are executed in MMIC using $0.15 \mu ~\mathrm{m}$ GaAs HEMT technology for X-band applications. Both the MMIC chips are measured at two different bias voltages of –1 V and –2 V and perfectly matched with the simulation results. The measured circuit response of a traditional switch is obtained as insertion loss from 1.35 dB to 2 dB and isolation is greater than 30 dB, whereas the insertion loss is found to be 1.2 dB and isolation is more than 28 dB from 8 GHz to 12 GHz in traveling wave topology. The capabilities of MMIC switches are being enhanced by ongoing developments in GaAs, MEMS, and CMOS RF technologies, guaranteeing their continuous incorporation into wireless networks and next-generation telecommunications