Enhancement-Mode Vertical (001) β-Ga2O3 Power Transistor Enabled by Dual Ion Implantation

This study presents a high-performance enhancement-mode (E-mode) β-Ga2O3 vertical field-effect transistor (DI-FET) featuring a planar gate structure, fabricated through sequential nitrogen and silicon ion implantation. The device demonstrates a maximum output current density of 123.5 A/cm² at a drain-source voltage (VDS) of 10 V, a peak transconductance of 49 S/cm², a specific on-resistance (Rₒₙ,sp) of 54.6 mΩ•cm², and a high threshold voltage (Vth) of 5.7 V. Furthermore, a breakdown voltage (BV) of 812 V is achieved at a gate-source voltage (VGS) of 0 V. These results underscore the considerable potential of nitrogen/silicon dual-ion-implanted β-Ga2O3 DI-FETs for next-generation high-performance power electronics.