Single-Event Latch-Up Characteristics of 16-nm FinFET SRAM-Based Field-Programmable Gate Array Under Single-Photon Absorption Laser Testing

This study investigates the impact of single-event latch-up (SEL), including traditional SEL, micro-SEL, and nonstationary SEL, on 16-nm fin field-effect transistor (FinFET) field-programmable gate arrays (FPGAs) through single-photon absorption (SPA) laser testing. This work proposes a cost-effective, accurate, and highly efficient method for analyzing SEL in FPGAs. This method combines current monitoring with readback bitstream analysis to categorize SEL events and observe their behavior at the circuit level. Laser irradiation revealed that, within the tested quadrant, the bottom HPIO block and the second and third GTY blocks exhibited the greatest susceptibility to SEL. No SEL events were observed within DSP blocks. Although further improvements are needed for SEU-dense CLB and BRAM blocks, the results demonstrate the capability of this approach to precisely locate micro-SEL events within the FPGA fabric, providing a valuable roadmap for implementing effective SEL hardening strategies.