Parallel-in-Time Algorithm for Transient Simulation of Semiconductor Devices

This paper explores the application of Parallel-in-Time (PinT) algorithm for transient simulations of semiconductor devices. We employed the Multigrid Reduction in Time algorithm to address the inefficiencies of conventional sequential time-stepping methods. For the first time, we demonstrate the non-intrusive integration of PinT into an industrial device–circuit co-simulation framework. Numerical experiments on a 2D PiN diode and a bipolar junction transistor showed improvements in computational speed and scalability via temporal parallelism, underscoring the potential of PinT for device simulations. Limitations of the PinT method and potential enhancements are also discussed.