Thermally Stable 1-Transistor FDSOI Neuron for Reliable Neuromorphic Applications in Space

This paper evaluates the performance of Fully Depleted Silicon-on-Isolator (FDSOI) MOSFETs, which are deployed as single transistor neurons in neuromorphic computing systems in relation to temperature fluctuations. The results show that the FDSOI MOSFETs perform consistently in a temperature range of 300K to 380K (27°C to 107°C), particularly when a large negative gate bias of -1 V is applied. Unlike the temperature-sensitive Impact Ionization (II), thermally insensitive band-to-band tunneling (BTBT) in these MOSFETs enables the single transistor latch (STL) function. Because of this, neuronal activity remains constant despite temperature variations. This thermally stable single-transistor neuron will be very much beneficial in the harsh temperature regimes such as the space environment.