Effects of perimeter recombination on GaAs-based solar cells

Perimeter recombination currents have been experimentally characterized on GaAs p/n heteroface diodes and solar cells with areas ranging from 2.5*10/sup -5/ to 0.25 cm/sup 2/. Under 1-sun operation at the maximum power point, measurements show that the n approximately=2 perimeter recombination current component degrades the cell's fill factors but does not greatly affect the open-circuit voltage. The n approximately=2 perimeter recombination currents are examined theoretically on small-area cells using a two-dimensional drift-diffusion device simulator, PUPHS2D. This model verifies the importance and origin of perimeter recombination in heteroface GaAs-based solar cells. Two methods of reducing the n approximately=2 perimeter recombination are explored.<>