Multi-Finger InP HEMT Source-Grounding Techniques for Hybrid and MMIC LNAs

In this work, five source-grounding techniques used in a two-finger, 100-nm gate-length, 100-μm gate-width InP HEMT are reported. Depending on the configuration chosen, the transistor can be used in hybrid and/or MMIC LNAs. In this investigation, we analyze the effect of each grounding technique on the DC and RF performance at room temperature and evaluate their suitability for cryogenic applications.