Simulation analysis of clip bonding package

The surge capability of a module refers to the ability of the power modules to withstand the impact of surge currents. Surge currents lead to excessive heat generation in the circuit components. Inadequate heat dissipation can potentially cause thermal overload, leading to permanent device damage. Clip bonding design typically features an enhanced interfacial contact area with the semiconductor chip, facilitating superior thermal dissipation characteristics in the modules. The excellent thermal performance of the clip can effectively reduce the temperature of the modules, ensuring its normal operation even under surge impact. This paper utilizes ANSYS to establish a finite element simulation model, conducting a comparative analysis of the surge capability between Cu clip bonding package and Al wire bonding package. High-power modules often use multiple chips in parallel. This paper presents the design of a multi-chip parallel power module based on Clip bonding technology. Current imbalance is a critical issue in parallel chip configurations. Package asymmetries during switching cause this effect. Proper current sharing among parallel chips ensures even power distribution, eliminating thermal imbalance and preventing single-chip overheating. Measuring individual chip currents in parallel configurations presents significant challenges: high implementation costs, time-consuming procedures, and limited suitability for rapid design validation during development cycles. This study presents a simulation-based methodology for assessing current distribution in parallel-connected chips through comprehensive circuit modeling. In this study, ANSYS Q3D is applied for the initial extraction of parasitic inductance in parallel-connected chip configurations within individual arms. Then, double-pulse testing methodology is implemented using LTspice circuit simulation software to characterize the switching behavior of the power module. This approach enables detailed observation of both turn-on and turn-off transient processes in parallel-connected chips, facilitating comprehensive analysis of current distribution dynamics within the parallel arm configuration.