Effect of the High-Temperature and High-Frequency Off-State Stresses on the Evolution of Traps in AlGaN/GaN HEMTs

Through photoelectric combined measurement technology, this article investigates the evolution and precise locations of device traps under high-temperature and high-frequencyoff-state electrical stress. The transient current analysis reveals the existence of four different types of traps. The trap with a microsecond-range time constant exhibits significant evolution under high-temperature stress. High-temperature conditions also lead to the prefilling phenomenon of surface state trap, leading to a continuous decrease in the device’son-state current. The experimental results will contribute to the optimization of device performance.