Multispectral Imaging Sensor With In-Plane Anisotropy Photodetectors

Polarization-sensitive photodetection technology, as a cornerstone of next-generation sensing, imaging, and communication systems, significantly contributes to the advancement of optical systems. In the short-wave infrared (SWIR) regime, the device’s polarization anisotropy ratio exhibits pronounced wavelength dependence, increasing from 7.014 at $1.45~\mu $ m to 18.06 at 940 nm. By further leveraging gate-voltage control over electron transport, this study establishes a deep-learning model that combines polarization preprocessing with gate-tuned wavelength selection within the channel. To further validate the practical applicability of this heterostructure, an uncooled PbTe/GeS2-based $32\times 32$ SWIR multiwavelength image sensing array was successfully developed with a highest 3.54 A/W and $10^{{10}}$ Jones (at 940 nm). Imaging experiments corroborated its performance, substantiating its prospective deployment in next-generation filterless multispectral imaging systems.