Design and Comparative Analysis of 10nm NanoSheet-FinFET and FinFET with Dual Dielectric Spacer under Varying Doping Concentrations

This work investigates the effect of single and dual-dielectric spacers on the performance of FinFET and Nanosheet FinFET (NS-FinFET) devices at the 10 nm technology node. Two doping concentrations, 10¹⁸ cm^-3 and 10¹⁹ cm^-3, are considered to analyze their impact on key electrical parameters such as Drain-Induced Barrier Lowering (DIBL), subthreshold swing (SS), and threshold voltage (Vth) using Visual TCAD 3D Cogener simulation tools. The single dielectric spacer consists of SiO2, while the dual-dielectric spacer combines HfO2 and SiO2 to enhance gate control. Simulation results show that devices with dual-dielectric spacers achieve significantly reduced DIBL, improved SS, and more stable Vth compared to those with single-dielectric spacers. Furthermore, NS-FinFETs demonstrate superior electrostatic integrity and reduced leakage in comparison to conventional FinFETs. These findings confirm that dual-dielectric spacer engineering in NS-FinFETs is a promising approach for high-performance, energy-efficient next-generation semiconductor devices.