High-Frequency CMOS VLSI Circuits for Terahertz Communication Systems

High-frequency complementary metal-oxide-semiconductor (CMOS) very-large-scale integration (VLSI) circuits are essential components to get around the drawbacks of conventional RF circuits and clear the way for the future of communication systems Terahertz (THz1). Existing radio-frequency (RF) and III-V semiconductor-based systems' high-power consumption, constrained bandwidth, and restricted integration capabilities hinder the performance that permits high-speed data transfer at THz frequencies. CMOS VLSI technology, which is scalable, economical, broad bandwidth, low power consumption, and high gain, is used to create the proposed system. Lower energy and improved signal performance have been demonstrated via simulations and optimizations. While using 1.2 mW of power and operating over 5.0 GHz of bandwidth, the suggested system achieves a gain that is more than three times higher than that of existing systems. It enables for a data rate of 50 Gbps with 20 dB of signal integrity (gain). The future generation of wireless networks will benefit greatly from the latest technology, which is well suited for ultra-high-speed communication and is anticipated to provide ultra-high performance at low energy consumption levels.