A Simple CVD for Depositing TSV Sidewall Insulation Layer

In TSV technology, the insulation layer is an essential part. Currently, the mainstream TSV insulation layer is silicon oxide. It is deposited on the sidewalls of TSV using the PECVD method. However, the PECVD method for depositing TSV insulation layer is complex, as it has high requirements for reactants and equipment. This experiment introduces the chemical reaction of wet oxygen with silicon to form silicon oxide into CV. CVD is used to deposit silicon oxide as the sidewall insulation layer. The thickness of the silicon oxide film is measured at the opening, middle, and bottom of the blind hole. Regardless of whether the growth time is 3 hours or 4 hours, the uniformity of the grown silicon oxide insulation layer thickness is good. When the growth duration is 4 hours, the thickness at the thinnest part is 64.9% of that at the thickest part. Moreover, compared to the two existing methods, the leakage current levels are similar.