Simulation Study of AlN/AlxGa1-xN/GaN Graded Channel High Electron Mobility Transistors for High Linearity and High E-Field Applications

This paper conducts extensive simulation studies on AlN/AlxGa1−xN/GaN HEMTs with graded Al composition, focusing on the effects of varying channel layer thicknesses and Al component ratios. Firstly, a systematic analysis was conducted on the evolution law of the carrier distribution and its underlying mechanism. Subsequently, by analyzing the electric field distribution in AlN/AlxGa1−xN/GaN HEMTs with varying channel layer thicknesses and Al composition ranges, the optimal structural parameters were determined. These parameters not only effectively improve device linearity but also achieve the best mitigation effect on the peak electric field under the gate. Thus, it can meet the requirements of high electric field and high linearity.