Minimizing Power Losses in Full-Bridge DC-DC Converters: A Systematic Approach

In modern power electronics, DC-DC converters play a crucial role in achieving efficient voltage transformation and regulation across various applications. Among them, the Full-Bridge (FB) DC-DC Converter stands out for its ability to handle large power levels with excellent efficiency. However, even small power losses also remain a critical challenge, impacting overall system performance and thermal management. Minimizing these losses requires a systematic approach that considers sources of losses like semiconductor switching behavior, conduction losses, magnetic component losses and circuit parasitics. The quest for more efficient and compact DC-DC conversion solutions has driven the advancement of cutting-edge technologies and devices. One such advancement is the Full Bridge Phase-Shift (FBPS) DC-DC Converter incorporating phase-shift control to achieve Zero-Voltage Switching (ZVS). By ensuring that switching transitions occur at zero voltage, ZVS operation significantly reduces switching losses, minimizes electromagnetic interference (EMI), and enhances thermal performance. Usage of GaN FET brings many advantages over conventional silicon MOSFET both in conduction and transition operation. This paper systematically explores strategies to enhance FB converter performance by analyzing key loss mechanisms and their corresponding solutions. By addressing these factors, the efficiency of FB converters can be significantly enhanced, which greatly increase their suitability for contemporary power electronics applications.