HfO2-SiO2 Hybrid Bonding Technology Applied for High-density 3D Integrated Devices

A HfO₂-SiO₂ hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes three steps: (1) surface treatment of the bonding interface of HfO₂ and SiO₂ using Ar plasma and 3% ammonia solution treatment, which increases the hydroxyl density on the bonding surface. (2) Pre-bonding at 100°C in an atmospheric environment to remove water molecule from the suspended hydroxyl group at the HfO₂-SiO₂ interface. (3) A laser rapid annealing process (LRAP) at 400°C for 5 seconds to further strengthen the bond strength of Hf-O-Si chemical bonds formed at the bonding interface. This technology enables the successful fabrication of a novel 3D memristors. Furthermore, this work offers innovative design strategies for next-generation 3D architecture devices.