120 A/1.78 kV p-Cr2O3/n-β-Ga2O3 Heterojunction PN Diodes with Slanted Mesa Edge Termination

In this study, we demonstrate large-area, high-performance β-Ga₂O₃-based heterojunction PN diodes (PNDs) featuring a p-type chromium oxide (p-Cr₂O₃) layer deposited via magnetron sputtering and an optimized slanted-mesa edge termination (ET) for electric field management. The fabricated diodes exhibit an active area of 9 mm² and achieve state-of-the-art electrical characteristics, including a high breakdown voltage (BV) of 1.78 kV, a forward current (IF) of 120 A, and an ultralow on-resistance (R_on) of 69 mΩ. Notably, the slanted-mesa-ET PNDs show only a marginal reduction in forward current compared to their non-ET counterparts, while achieving a 36% enhancement in BV. This results in a power figure of merit (PFOM) of 0.511 GW/cm², the highest reported to date for any large-area (>1 mm²) β-Ga₂O₃ diode. This exceptional performance underscores the viability of β-Ga₂O₃ for next-generation high-power electronics, particularly through the introduction of novel p-type materials and edge termination designs.