Impact of Bulk Defects on Reliability and Noise in 1200 V SiC DMOSFETs

This paper investigates the analysis of lowfrequency noise in 1200 V SiC VD-MOSFETs, emphasizing the differentiation between bulk and interface defects using noise characteristics. The noise power spectral density (PSD) measurements and the activation energy analysis of defects through temperature variation. It demonstrates the impact of these defects on device reliability and performance and shows how this analysis can help in optimizing fabrication processes for high-performance SiC DMOSFET applications.