Monolithic Integrated β-Ga2O3 Inverters Based on Charge Trapping Layer E-Mode MOSFETs

In this work, the homoepitaxial monolithic integrated $\beta$-Ga2O3 inverters using charge trapping layer (CTL) are demonstrated. The enhancement-mode (E-mode) MOSFETs exhibit a threshold voltage $(\left.\mathbf{V}_{\mathbf{T}\mathbf{H}}\right)$ modulation capability of 10.9 V. Leveraging the tunable VTH of the E-mode devices, the proposed CTL-based inverters demonstrate the capability to operate across a broad spectrum of conditions, specifically with $\beta$ values ranging from 7 to 40 and supply voltages (VDD) between 5 and 18 V. The inverter with a $\beta$ value of 40 demonstrates an ultra-low output low voltage $\left(\mathbf{V}_{\mathbf{O} \mathbf{L}}=0.01 \mathbf{V}\right)$ along with excellent output swing/VDD ratio (17.99 V /18 V) and noise margin ratio $\left(\mathbf{N}\mathbf{M}_{\mathbf{L}} / \mathbf{N}\mathbf{M}_{\mathbf{H}}=7.65 \mathbf{V} / 7.55 \mathbf{V}\right)$. Furthermore, dynamic testing is conducted to analyze the dynamic performance of devices with different $\beta$ values at various frequencies. These findings present a viable approach for the fabrication of $\beta$-Ga2O3 integrated circuits.