GaN/SiC-Based Polarization Superjunction Hybrid HEMTs (PSJ-hyHEMTs) on Vicinal Off-Angle SiC

GaN/SiC-based Polarization Superjunction hybrid HEMTs (PSJ-hyHEMTs) have been demonstrated. The PSJ-hyHEMTs were fabricated on 4-inch SiC substrates with a vicinal off-angle (0.65° off) to reconcile the crystal growth of both GaN and SiC. The avalanche breakdown voltage of the SiC-based body PiN diodes was designed at 1.2 kV by TCAD. GaN-based PSJ-HEMTs were monolithically integrated on top of the SiC diodes. The fabricated GaN/SiC-based PSJ-hyHEMTs show normally-off operation with threshold voltage of 0.5 V, low-specific on-resistance of 24 Ω.mm, and non-destructive avalanche breakdown at 1.2 kV.