Simulation of Electrical-Thermal and Mechanical Characteristics and Reliability Optimization of IGBT Modules Based on Multi-physics Coupling

With the wide application of high-power electronics inflexible DC transmission and other fields, Insulated Gate Bipolar Transistor (IGBT) modules play a vital role in it. Due to the high current load and high-frequency switching frequency of IGBT module during operation, the electrical, thermal and mechanical coupling effect has a great impact on its performance and reliability. Traditional single-physics analysis methods fail to adequately reveal these complex couplings. Therefore, based on the multi-physics coupling simulation technology, the thermal, electrical and mechanical coupling characteristics of the IGBT module are systematically analyzed, and the performance changes and degradation mechanisms of the IGBT module under different on-currents are revealed. By simulating the electric field, temperature and stress distribution of the IGBT module under different on-current conditions, the influence of current change on the module is studied. The results show that the increase of on- current significantly changes the electric field strength, temperature distribution and stress field of the module, which in turn leads to the deterioration of the IGBT module. Finally, this study provides a theoretical, basis for the design optimization and reliability improvement of IGBT modules, and provides guidance for the reliability improvement of IGBT modules in high-power applications in the future.