Achieving Exceptional Electron Mobility in Amorphous In2O3:Sn Films Through Nitrogen-Mediated Room-Temperature Processing

We have developed a novel fabrication method for amorphous $\text{In}_{2} \mathrm{O}_{3}: \text{Sn}$ (a-ITO) films called nitrogen-mediated amorphization (NMA), which involves introducing $\mathbf{N}_{\mathbf{2}}$ gas into the sputtering deposition atmosphere. Using the NMA method, we successfully fabricated a-ITO films with a high electron mobility of $\mathbf{5 0} \mathbf{c m}^{2} / \mathbf{V s}$ even at room temperature. Moreover, the NMA method significantly enhances the spatial uniformity of the electrical properties of a-ITO films. These results demonstrate that the NMA method holds great promise for producing high-quality a-ITO films on flexible and large-area substrates.