Temperature-Dependent Nonlinear Optical Behavior of Germanium Semiconductor Structures for Infrared Sensing Applications

This current research paper investigates the temperature-dependent nonlinear optical behavior of germanium (Ge)-based semiconductor structures, focusing on their application in infrared sensing. The study explores the reflection losses and intensity changes of germanium across a broad wavelength range (1.9 μm to 18 μm) at temperatures between 100 K and 550 K. The nonlinear relationship between temperature and optical intensity is characterized, revealing an increase in intensity and sensitivity up to an optimal temperature before both quantities start to decline. The results indicate that the germanium-based sensor exhibits a peak sensitivity of 159.29 mW/°C. A significant enhancement is compared to previous studies on similar semiconductor materials. The paper discusses the implications of these findings for the development of more accurate temperature sensors and the potential for germanium to be used in a wide range of infrared sensing applications. Comparative analysis with published literature is provided to highlight the performance improvements achieved through careful optimization of the sensor’s temperature response.