Fully-Tunable Tunnel-Coupled Quantum Dots and Charge Sensing in a Commercial 22 nm FD-SOI Process

Confining electrons or holes in quantum dots formed in the channel of industry-standard fully depleted silicon-on-insulator CMOS structures is a promising approach to scalable qubit architectures. In this communication, we present measurement results of a commercial nanostructure fabricated using the GlobalFoundries 22FDXTM industrial process. These quantum dots are formed in the device channel between polysilicon gates. We report precise control over inter-dot coupling, bias triangle formation, and single electron box sensing in a commercial process for the first time.