Overview of L-UTSOI, a Standard Compact Model for FD-SOI Technologies

The modeling of FD-SOI transistors is a challenging task because it requires to deal with two potential conduction channels that are more or less coupled together. L-UTSOI has been developed to fulfill this need. It incorporates all the physical effects required to describe the behavior of aggressively scaled transistors and, through the years, it has been extended to high frequency operations and cryogenic temperatures to enable a wider use of FD-SOI technologies.