Logic Circuit Design and Simulation of Temperature Dependent Physical Parameters Modelling Based Memristor

In this paper logic circuit designing and simulation of a memristor is accomplished by considering the temperature effect on its various characteristic parameters. Based on the experimental data on the conductivity and temperature of TiO2, a dependence of temperature and multiple parameters of the memristor, such as ON and OFF resistances, mobility, charge storing capacity, and diffusion coefficient, are calculated. Considering these variations on the ThrEshold Adaptive Memristor (TEAM) model of memristor, OR and AND gates are designed. Simulation for logic design is performed using the OrCAD EDA tool.