HEMT-Based Memory: A New Paradigm for High-Speed and Reliable Data Storage

The evolution of memory technologies demands faster, more reliable, and energy-efficient devices. High Electron Mobility Transistor (HEMT)-based memory offers promising attributes such as ultra-fast switching, excellent radiation resistance, and high-temperature tolerance, making it suitable for next-generation electronics. This paper provides a comprehensive review of HEMT-based memory fundamentals, architecture, innovations, comparison with traditional memory technologies and potential applications.