Research and Design on modulated Drive Circuit of Parallel SiC-MOSFET Devices

In response to the common occurrence of transient overloads such as overcurrent and overvoltage in silicon carbide (SiC) devices used in high-voltage, high-frequency, hightemperature, and high-power density environments such as electric vehicles, aerospace, coal mines, and offshore oil fields, and the fact that most of the current market-driven circuit designs are unable to adaptively drive various models of SiC-MOSFETs, a driving circuit using the IX4351 as the driving chip has been researched and designed. This circuit can adapt to the parameters of SiC devices from most manufacturers, providing adaptive negative voltage regulation for various types of SiC-MOSFETs and offering sufficient peak current to drive parallel SiC circuits. The characteristics of the SiC driving circuit are analyzed, the driving power is calculated, and the schematic diagram of the driving circuit with the IX4351 as the core is presented. Simulation and experimental results demonstrate that the designed SiCMOSFET driving circuit has good driving capability, capable of driving parallel SiC-MOSFETs and adapting to SiC devices with different parameters from various manufacturers.