Engineering Application of MOSFET Negative Voltage Drive Circuit Design in Bridge Circuit

Compared with traditional Si MOSFETs, SiC MOSFETs exhibit significant advantages such as faster switching speeds and superior thermal performance, leading to their increasingly widespread application. However, at higher switching speeds, the impact of parasitic parameters in SiC MOSFETs becomes more pronounced. In full-bridge converter circuits, the turn-on and turn-off of the upper and lower transistors in the same bridge arm can interfere with each other, affecting the circuit's reliability. Addressing the crosstalk phenomenon in SiC MOSFETs, this paper analyzes the causes of crosstalk from the perspective of parasitic parameters and proposes the application of negative voltage driving to mitigate its effects. A negative voltage driving circuit is designed, characterized by its simplicity, high reliability, and easy to apply in engineering. Finally, the designed driving circuit is implemented on an engineering prototype, and experimental waveforms validate the effectiveness of the design.