Pulsed Characterization of 1.2 kV SiC Optically Controlled Transistor With Reverse Conducting Performance

A 1.2 kV 4H-SiC optically controlled transistor with reverse conducting performance was designed and fabricated as demo chip for pulsed characterization evaluation. A 355 nm UV laser was used to drive the transistor via optical fiber. The experimental results indicated that the SiC optically controlled transistor obtained a good pulsed characteristic. The full width at half maximum of output current pulse was all in 100 ns and there was no obvious current trailing phenomenon. When the biased voltage was 1000 V and the laser energy was $10\mu $ J, the peak current and current rising rate of the device were 4.61 A and 1.0 kA/ $\mu $ s, which the corresponding peak current density and current density rising rate were 307.3 A/cm2 and 66.7 kA/(cm ${}^{{2}}\cdot \mu $ s), respectively.