Thermal-Compensated MRAM Sensing: Dynamic TMR Stabilization Across Wide Temperature Range

The Spin-Orbit Torque Magnetic Random Access Memory (SOT-MRAM) demonstrates significant potential for high-speed, low-power applications, garnering considerable attention from both academia and industry. However, due to the physical properties of magnetic tunnel junction (MTJ) itself, tunnel magnetoresistance ratio (TMR) will decrease with increasing temperature, thereby reducing the reliability of MRAM and posing a key challenge to the application of MRAM chips. To address this issue, this paper proposed a reliable temperature-adaptive Sensing Scheme (TASS) for SOT-MRAM, which can stabilize TMR across a wide temperature range from −40°C to 125°C by dynamically adjust read voltage. Simulation results at 28 nm indicate that TASS reduces the TMR degradation from 25% to 5% as the temperature increases from −40°C to 125°C, while exhibiting a current adjustment capability of 142%. Furthermore, the proposed readout circuit ensures a lower worst-BER over the same temperature range, providing a substantial enhancement in read reliability by 3 orders of magnitude.