A 3D Heterogeneously Integrated Power Amplifier Module using BiCMOS and RF SOI CMOS Technologies for 5G Applications

This paper presents the first full 3D heterogeneously integrated (HI) power amplifier (PA) module for 5G sub-6 GHz applications, using 130-nm BiCMOS and 130-nm RF Silicon-on-insulator (SOI) CMOS technologies. The cost-effective 3D power amplifier module contains a BiCMOS driver flip-chip on an RF SOI power stage including LDMOS transistors with its analog supply control, inside a $4 \times 4 \mathrm{~mm}^{2}$ QFN package. The 3D power module exhibits a power gain of 38 dB. The maximum PAE is 32% and the maximum measured output power is 35.3 dBm at 3.4 GHz. The core size of the 3D module is $3.6 \mathrm{~mm}^{2}$.