Silicon CMOS Image Sensor With Wide Response Spectrum From 254 nm to 1310 nm Enabled by Photodiode-Body-Biased MOSFET

The bandgap of silicon (Si) restricts the spectral response of conventional Si-based CMOS image sensors to the 400-1100 nm range, limiting their utility in applications requiring broader wavelength detection. To overcome this spectral limitation and to unlock new opportunities in fields such as secure surveillance, industrial inspection, and scientific instrumentation, we present a novel silicon image sensor architecture. Our design employs a five-transistor active pixel sensor (5T-APS) integrated with a photodiode-body-biased MOSFET (PD-MOS), enabling extended spectral sensitivity into the shortwave infrared (SWIR) range. We have successfully fabricated a $128\times 128$ -pixel array chip and developed a room-temperature SWIR imaging system based on this architecture. The results of 5T-APS demonstrate effective SWIR image acquisition using standard silicon technology, highlighting its potential as a cost-effective and scalable solution for next-generation SWIR imaging.