A New Dual-Band RF to DC Rectifier With High Current Delivery and Wide Dynamic Range for WPT Application

A novel single-structure multistage cross-coupled differential-drive (MS-CCDD) rectifier with a power conversion efficiency (PCE) of $252~{\mu }$ A in the high frequency (HF) band and $106.7~{\mu }$ A in the ultrahigh frequency (UHF) band for dual-band (DB) operation is presented in this study, which has multiple charging path (MCP) and multiple coupling capacitors to deliver wide dynamic range (DR) of efficient current transmission in both the HF ( $I~{\gt }~200~{\mu }$ A) and UHF ( $I~{\gt }~100~{\mu }$ A) bands, and can reduce pMOS’ leakage current by adaptively regulating the conduction of the rectifier’s transistor using a passive-charge adaptive biasing approach. Furthermore, in DB situations, the passive-charge adaptive unit (PCAU) supports high-current driving capacity by maintaining ac charge adaptation under large input amplitudes. By modifying the dc level on the nMOS side to cover a broad input power range, the MCP structure increases the forward current (IFWD). This works especially well in the UHF band, where it further enhances PCE’s overall and output current transmission. The four-stage DB rectifier, which is fabricated using a 0.18- $\mu $ m CMOS technology, has a PCE ${\gt }~40$ % and a high-output power delivery DR (OPDR) of 10 dB for the HF band and 8 dB for the UHF band. In the UHF band, a power supply of $270~{\mu }$ W ( ${\gt } 100~{\mu }$ A at 2.53 V) produces a peak PCE of 58.55% while in the HF band, a power supply of $635~{\mu }$ W ( ${\gt } 200~{\mu }$ A at 2.55 V) produces a peak PCE of 40.15%.