Bulk Feedback Field-Effect Transistor

A feedback field-effect transistor (FBFET) fabricated on a bulk Si substrate is presented. The bulk FBFET features a dual-well structure with multiple p-n junctions on the substrate. This novel structure prevents body leakage and ensures reliable FBFET operation. The bulk FBFET demonstrates unique electrical characteristics, including drain–source current ( ${I}_{\text {DS}}\text {)}$ latch-up, latch-down, and hysteresis. During ${I}_{\text {DS}}$ latch-up and latch-down, the bulk FBFET exhibits an extremely low subthreshold swing of less than 1 mV/dec and a high on/off ratio of $5.71 \times 10^{{5}}$ .