Integration of Lateral Si/SiGe HBTs on Advanced FD-SOI Technology: Process Development and Challenges

This paper presents an integration of a lateral Si/SiGe heterojunction bipolar transistor (LHBT) device on an advanced Fully-Depleted-Silicon-On-Insulator (FD-SOI) Complementary Metal-Oxide Semiconductor (CMOS) process flow accompanied by a Technology Computer Aided Design (TCAD) study. The analysis is based on physics principles, explaining the behavior of the LHBT device. Although the simulated device shows significantly high performance, especially for the maximum oscillation frequency (fMAX), there are serious challenges in achieving the same performance on silicon. These challenges in creating high-performance devices in FD-SOI are presented.