Optimizing Low Dropout Voltage Regulator Design through Automation Using 45nm Technology and gm/ID Methodology

A primary challenge of the IC business would be power management, especially with the rapid growth in the number of battery-operated portable devices such as smartphones and laptops and wireless sensor networks. With its simplicity, low implementation cost, and quick response time, When it comes to managing low voltage on-chip power, low-dropout (LDO) voltage regulators are now the go-to guys in this space. In order to power Wireless Sensor Networks (WSN) nodes, this project aims to provide an integrated LDO voltage regulator that is compatible with real CMOS technology while minimising chip area and power usage. In the advanced CMOS nano metre process nodes the conventional square-law model faces challenges in accurately predicting MOSFET device characteristics. The technology-lookup table (LuT) based design method [1] overcomes the limitations of a traditional square-law technology LuTs that are created by spices on an as-needed basis. An LDO is created and tested using 45 nm CMOS technology across the High-PSRR LDOs for Radio Frequency (RF) applications, Fast transient-response LDOs for digital ASIC applications and Low-quiescent current LDOs for Internet of Things (IoT) applications.