Enhancing MOSFET Performance using InGaN Single Substrate and HfO2 Gate Oxide with TiN Gate Metal

This Paper improves MOSFET performance by employing an Indium Gallium Nitride (InGaN) substrate, Hafnium Oxide (HfO2) as the gate dielectric, and Titanium Nitride (TiN) for the gate metal. InGaN provides excellent electron mobility, thermal resilience, and is well-suited for high-power uses. HfO2 with its elevated dielectric constant, minimizes gate leakage and enhances reliability. TiN boosts thermal resilience, lowers resistance, and optimizes electrical characteristics. Both simulation and experimental findings validate enhanced stability of threshold voltage, decreased power consumption, and increased overall efficiency, indicating a promising direction for MOSFETs aimed at high-performance in power and high-frequency applications.