Optimizing HEMTs: Innovations in Field Plate Design for Superior Performance and Reliability

High-electron-mobility transistors (HEMTs) are a critical technology in high-power and high-frequency systems due to their high electron mobility, wide bandgap, and excellent thermal stability. However, their performance and dependability are hampered by problems such electric field crowding, low breakdown voltage, and serious heat management problems. Optimizing field plate designs, which are essential for enhancing electric field distribution and lowering peak field intensity, is one practical way to deal with these issues. By improving important performance metrics like breakdown voltage, ON-resistance, transconductance, and cut off frequency, these developments increase the efficiency and dependability of HEMTs. The impact of recent advancements in field plate design on HEMT performance is thoroughly examined in this research. This research shows how optimized field plates lead to higher breakdown voltage, lower peak electric field intensity, and better current characteristics by analysing several design strategies and their implications on crucial performance indicators. These developments in HEMT technology open the door for the creation of dependable and highly efficient electronic devices for use in the future.