First Demonstration of 1T FDSOI-Based >1000fps Image Sensor with In-pixel Computing

In this work, we first demonstrate a $128\times 128$ image sensor based on 1T 22nm FDSOI pixel, which leverages the deep depletion region under buried oxide (BOX) for optical sensing. Key features include: (1) extremely high photosensitivity of $5\times 10^{5}$ A/W is achieved thanks to the amplifying effect of the FET; (2) photosensitivity can be tuned by gate/drain voltage, enabling in-pixel computing capability in 1T structure; (3) the chip can achieve >1000 fps imaging and feature extraction utilizing the in-pixel processing capability and the proposed exposure/sampling/readout uncoupled pipeline design.