The Centennial of FET and the Silver Jubilee of IWJT: Tracing the Origins and Evolution of Junction Technology in FETs

In 2025, the International Workshop on Junction Technology (IWJT) will celebrate its 25th anniversary. Notably, this milestone coincides with the centennial of the invention of the Field Effect Transistor (FET) [1]. When IWJT was first established 25 years ago, junction technology -- particularly ultra-shallow junction technology -- was a hot topic. At that time, the term “junction technology” was commonly understood in a narrow sense, referring to ultra-shallow junctions in the source and drain diffusion layers of MOSFETs. In fact, the inaugural IWJT exclusively featured papers and panel discussions on this topic.