Overview of IWJT2017 to 2023 held in Japan

17^th IWJT (IWJT2017) was held in Uji Campus of Kyoto University on 1–2 June, 2017. The previous IWJT2015 incorporated the new trends of defect engineering and junction technologies in compound semiconductors, which was continued in IWJT2017. In addition, papers related to two-dimensional (2D) materials were accepted for the first time in IWJT2017. Of course, shallow p-n junction technologies for doping into Si-based devices and annealing were also discussed, where the technologies for three-dimensional stacking especially attracted attention. Due to covering a wide range of fields, the number of contributed papers reached twenty. One keynote and nine invited papers were also presented.