p-GaN Gated HEMT With 770 ION/IOFF Ratio Operating at 800 °C

A p-GaN gated high electron mobility transistor (HEMT) has been developed and electrically tested up to 800 ° C. The device demonstrated a high on-state current of 80 mA/mm and simultaneously a high ION/IOFF ratio of 770 at 800 ° C. The transistor was also thermally stressed at 800 ° C for 60 min. It demonstrated stable operation throughout the entire stress duration. The favorable on-current, on/off ratio, and stability show a promising path for high-temperature electronics based on GaN.