An Analytical Model of 2DHG Density for Hydrogen-Terminated Diamond Devices

This article presents two physical-based analytical models for 2-D hole gas (2DHG) density in Hydrogen-terminated Diamond (HD) devices. The three-band model is derived from the up-bending band structure in the surface of HD analyzed by triangular potential well approximation and an assumption of scaling relationship between carriers in three valence bands and the density of 2DHG. In addition, an equivalent single-band model is proposed without any empirical or fitting parameters. The analytical relationship between the Fermi level and the 2DHG density with respect to overdrive voltage and temperature is established. These models demonstrate a strong consistency with the numerical solution, thus paving the way for the derivation of a physical-based compact model for circuit design.