Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates With Ferroelectric AlScN Gate Stack

We present monolithic integrated, $\alpha $ -Ga2O3 reconfigurable NAND and NOR logic gates. Fabricated $\alpha $ -Ga2O3 field-effect transistors with a ferroelectric AlScN gate stack (FeFET) exhibit memory window of up to 5.5 V at ${V}_{\text {DS}} = 1$ V. Threshold voltage modulation of ~3.8 V is achieved via a program (10 V, 1 s) and erase pulse (−20 V, 1 s), respectively. Moreover, voltage transfer curves of the logic circuit as an inverter confirm hysteretic behaviors with a higher gain during a reverse sweep. Finally, reconfigurable logic operations are successfully demonstrated via two distinct input pulses and a source bias to the driver FeFET. The results demonstrate viability of monolithic integrated, compact Ga2O3 logic circuits.