A Loss Calculation Method Considering Diode Characteristics and Mounting Effect

This paper proposes a diode loss calculation method that considers the diode mounting effect, aiming to optimize the design of diodes and rectifiers in the field of wireless power transfer (WPT). Compared to traditional loss calculation methods, the proposed approach not only incorporates the intrinsic characteristics of the diode but also thoroughly analyzes the impact of mounting on parasitic parameters and power loss. To validate the effectiveness of the method, a class-F rectifier circuit operating at 5.8 GHz is designed. Under the conditions of 10W input power and 139 Ω load, the loss rate of the diode is calculated as 16.553% based on the method proposed in this paper, which aligns well with the software simulation results. Furthermore, the calculated diode loss is used as the heat source power for thermal analysis. The results indicate that the maximum temperature of the GaN diode reaches 244°C, while other areas maintain temperatures around 66°C. The local hot spot temperature is high but still within the allowable range. This research provides significant theoretical support and practical guidance for optimizing high-frequency performance and thermal management in rectifier circuit design.