On the high temperature operation of high voltage power devices

The surface component of reverse current is a serious limitation for the operation of high voltage/current devices at high junction temperature. This component may induce reverse current-voltage instability of a PN junction followed by device failure during high temperature operation. Experimental results are presented for silicon rectifier diodes, revealing the influence of the junction surface leakage current on the reverse I-V characteristics. Known results for silicon carbide PIN diodes are considered for comparison. Available PN junction passivation methods at this time are not effective enough in controlling the junction surface leakage current. Improved surface passivation techniques are required to achieve reliable device operation, especially above 200/spl deg/C.