Advanced 3D RESURF devices for power integrated circuits

Power integrated circuits will be an area of high growth in IT and consumer products due to several factors, among which the following play the crucial role: regulations for increased efficiency, the need for smart features and high reliability, reduced size and weight, and all at a reduced unit cost. This paper is concerned with recent trends in high voltage devices for high voltage integrated circuits and in particular the application of the RESURF effect to the third dimension for a significant increase in the breakdown capability of lateral devices. New 3D device concepts are presented in comparison with classical LDMOSFETs and LIGBTs.