Thickness dependent properties of CdS/CdTe hetero-photo-elements

The analysis of the I-V characteristics of a CdS/CdTe heterojunction shows the strong influence of the time of deposition of CdTe on the photo-electrical parameters. The best parameters with no antireflection coating, J/sub sc/=24.8 mA/cm/sup 2/, V/sub oc/=0.82 V, FF=0.48, /spl eta/=9.76% are obtained in the case when time of deposition of CdTe is 3.5 min. The photoresponse decreases with increasing CdTe thickness. The photosensitivity covers the wavelength range from 0.50 /spl mu/m to 0.86 /spl mu/m for all cells. The most efficient carrier generation and collection is for the structure with the time of the CdTe layer deposition of 3.5 min.